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IRF1018EPBF +BOM

This TO-220AB MOSFET has a low on-state resistance of 8.4mΩ at 10V and 47A

Produttore:

INFINEON
ProduttorePart #:

IRF1018EPBF
Scheda dati:

IRF1018EPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRF1018EPBF

IRF1018EPBF Descrizione generale

Housed in a TO-220AB package, the IRF1018EPBF strikes a good balance between thermal performance and ease of mounting. With a wide operating temperature range of -55°C to 175°C, this MOSFET is designed to withstand harsh environmental conditions, making it a versatile and dependable choice for a variety of applications

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Specifiche

Source Content uid	IRF1018EPBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Avalanche Energy Rating (Eas)	88 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	79 A
Drain-source On Resistance-Max	0.0084 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	110 W	Pulsed Drain Current-Max (IDM)	315 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	60 V	Id - Continuous Drain Current	79 A
Rds On - Drain-Source Resistance	7.5 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	46 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	110 W	Channel Mode	Enhancement
Height	15.65 mm	Length	10 mm
Product Type	MOSFET	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	4.4 mm	Unit Weight	0.068784 oz

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