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IPW65R150CFD +BOM

High-power MOSFET capable of handling 700V and 22.4A in N-channel configuration

Produttore:

INFINEON
ProduttorePart #:

IPW65R150CFD
Scheda dati:

IPW65R150CFD Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPW65R150CFD

IPW65R150CFD Descrizione generale

The single-element design of the IPW65R150CFD simplifies circuit integration, while the advanced silicon technology and metal-oxide construction deliver superior switching characteristics and minimal power losses. Whether used in motor controls, inverters, or power supplies, this transistor offers consistent and stable operation for increased system efficiency

Caratteristiche principali

Ultra-fast body diode
Very high commutation ruggedness
Extremely low losses due to very low FOM RdsonQg and Eoss
Easy to use/drive
Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
Pb-free plating, Halogen free mold compound

Specifiche

Source Content uid	IPW65R150CFD	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	614 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	650 V	Drain Current-Max (ID)	22.4 A
Drain-source On Resistance-Max	0.15 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	195.3 W
Pulsed Drain Current-Max (IDM)	72 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	IDpuls max	72.0 A
Ptot max	195.3 W	RthJC max	0.64 K/W
RthJA max	62.0 K/W	VDS max	650.0 V
Polarity	N	ID max	22.4 A
RDS (on) max	150.0 mΩ	Mounting	THT
Special Features	fast recovery diode	VGS(th) max	4.5 V
VGS(th) min	3.5 V	Operating Temperature max	150.0 °C
Operating Temperature min	-55.0 °C

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