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IPLU300N04S41R1XTMA1 +BOM

N-Channel 40 V 300A (Tc) 300W (Tc) Surface Mount PG-HSOF-8-1

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IPLU300N04S41R1XTMA1
Scheda dati:

IPLU300N04S41R1XTMA1 Scheda dati (PDF)
Series:

Automotive, AEC-Q101, OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPLU300N04S41R1XTMA1

IPLU300N04S41R1XTMA1 Descrizione generale

When it comes to power MOSFETs, the IPLU300N04S41R1XTMA1 from Infineon Technologies stands out as a superior choice. With a 40V drain-source voltage rating, a continuous drain current of 300A, and an ultra-low on-resistance of 1.9mΩ, this MOSFET is designed to deliver maximum efficiency in high-power applications. Its TO-Leadless package enhances thermal performance and simplifies PCB mounting, while its RoHS compliance and compatibility with lead-free soldering processes make it an environmentally friendly and easy-to-use option for a variety of power electronics applications

Infineon Technologies Corporation inventario

Caratteristiche principali

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant); 100% lead free
Ultra low Rds(on)
100% Avalanche tested

Infineon Technologies Corporation Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	1.15mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 125µA	Gate Charge (Qg) (Max) @ Vgs	151 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	12090 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPLU300	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	300 A
Rds On - Drain-Source Resistance	1.15 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	151 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	300 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Configuration	Single
Height	2.4 mm	Length	10.58 mm
Product Type	MOSFET	Factory Pack Quantity	2000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Width	10.1 mm	Part # Aliases	IPLU300N04S4-1R1 SP001121554
Unit Weight	0.027197 oz

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