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IPD65R380E6ATMA1 +BOM

MOSFET LOW POWER_LEGACY

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IPD65R380E6ATMA1
Scheda dati:

IPD65R380E6ATMA1 Scheda dati (PDF)
Series:

CoolMOS™ E6
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPD65R380E6ATMA1

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

IPD65R380E6ATMA1 Descrizione generale

N-Channel 650 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO252-3

Infineon Technologies Corporation inventario

Caratteristiche principali

Easy control of switching behavior
Very high commutation ruggedness
Extremely low losses due to very low Figure of Merit (R
DS(ON)
g
oss
Easy to use
Better light load efficiency compared to C3
Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness
Better price performance in comparison to previous CoolMOS generations
More efficient, more compact, lighter and cooler
Improved power density
Improved reliability
General purpose part can be used in both soft and hard switching topologies
Better light load effciency
Improved effciency in hard switching applications
Improved ease-of-use
Reduces possible ringing due to pcb layout and package parasitic effects

Infineon Technologies Corporation Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolMOS™ E6
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 320µA	Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 100 V
FET Feature	-	Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPD65R380	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	10.6 A
Rds On - Drain-Source Resistance	340 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	39 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	83 W	Channel Mode	Enhancement
Tradename	CoolMOS	Configuration	Single
Fall Time	8 ns	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	7 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	57 ns	Typical Turn-On Delay Time	10 ns
Width	6.22 mm	Part # Aliases	IPD65R380E6 SP001117736
Unit Weight	0.011640 oz

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