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IPD50R380CEAUMA1 +BOM

IPD50R380CEAUMA1 - MOSFET Tailored for Consumer Electronics

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IPD50R380CEAUMA1
Scheda dati:

IPD50R380CEAUMA1 Scheda dati (PDF)
Series:

CoolMOS™ CE
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

500 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPD50R380CEAUMA1

IPD50R380CEAUMA1 Descrizione generale

The IPD50R380CEAUMA1 from Infineon Technologies is a cutting-edge 500V CoolMOS™ C7 Gold superjunction MOSFET that revolutionizes power electronics. With a remarkable figure of merit and efficiency, this MOSFET is a game-changer in power conversion applications. Its 500V drain-source voltage and 12A continuous drain current capacity make it versatile for various high-power tasks. The ultra-low on-state resistance of 380mΩ and gate charge of 45nC enable swift switching and reduced power losses in demanding high-frequency scenarios. The robust TO-252 package ensures excellent thermal performance and reliability in challenging environments, while its compliance with lead-free manufacturing standards underscores its commitment to sustainability

Infineon Technologies Corporation inventario

Caratteristiche principali

Reduced energy stored in output capacitance (E
oss
High body diode ruggedness
Reduced reverse recovery charge (Q
rr
Reduced gate charge (Q
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21
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DE-AT
X-NONE
X-NONE
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Easy control of switching behavior
Better light load efficiency compared to previous CoolMOS generations
Cost attractive alternative compared to standard MOSFETs
Outstanding quality and reliability of CoolMOS technology

Infineon Technologies Corporation Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolMOS™ CE
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V	Current - Continuous Drain (Id) @ 25°C	14.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V	Rds On (Max) @ Id, Vgs	380mOhm @ 3.2A, 13V
Vgs(th) (Max) @ Id	3.5V @ 260µA	Gate Charge (Qg) (Max) @ Vgs	24.8 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	584 pF @ 100 V
FET Feature	-	Power Dissipation (Max)	98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IPD50R	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	500 V	Id - Continuous Drain Current	14.1 A
Rds On - Drain-Source Resistance	380 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3 V	Qg - Gate Charge	24.8 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	98 W	Channel Mode	Enhancement
Tradename	CoolMOS	Configuration	Single
Fall Time	8.6 ns	Height	2.3 mm
Length	6.5 mm	Moisture Sensitive	Yes
Product Type	MOSFET	Rise Time	5.6 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	35 ns
Typical Turn-On Delay Time	7.2 n	Width	6.22 mm
Part # Aliases	IPD50R380CE SP001396790	Unit Weight	0.011640 oz

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