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IPW65R080CFDA +BOM
High-current Automotive N-Channel MOSFET, 650V Drain-to-Source Voltage
TO-247-3-
Produttore:
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ProduttorePart #:
IPW65R080CFDA
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Scheda dati:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Pin Count:
3
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Reach Compliance Code:
compliant
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EDA/CAD Modelli:
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IPW65R080CFDA Descrizione generale
Whether used in industrial motor controls, power supplies, or renewable energy systems, the IPW65R080CFDA delivers outstanding performance and long-term reliability. Its single-element design simplifies circuit integration, while its high switching speed enables efficient power conversion
Caratteristiche principali
HIGH RELIABILITYApplicazione
SWITCHINGSpecifiche
Source Content uid | IPW65R080CFDA | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | HIGH RELIABILITY | Avalanche Energy Rating (Eas) | 1160 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (ID) | 43.3 A | Drain-source On Resistance-Max | 0.08 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 137 A | Reference Standard | AEC-Q101 |
Surface Mount | NO | Terminal Finish | TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 43.3 A | Rds On - Drain-Source Resistance | 72 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 3.5 V |
Qg - Gate Charge | 161 nC | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 391 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | CoolMOS | Series | CoolMOS CFDA |
Fall Time | 6 ns | Height | 21.1 mm |
Length | 16.13 mm | Product Type | MOSFET |
Rise Time | 18 ns | Factory Pack Quantity | 240 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 85 ns | Typical Turn-On Delay Time | 20 ns |
Width | 5.21 mm | Part # Aliases | IPW65R8CFDAXK SP000875806 IPW65R080CFDAFKSA1 |
Unit Weight | 0.211644 oz | IDpuls max | 137.0 A |
RthJA max | 62.0 K/W | RthJC max | 0.32 K/W |
Ptot max | 391.0 W | Topology | Full Bridge |
Special Features | automotive | VDS max | 650.0 V |
VGS(th) max | 4.5 V | Polarity | N |
ID max | 43.3 A | VGS(th) min | 3.5 V |
Operating Temperature max | 150.0 °C | Operating Temperature min | -40.0 °C |
RDS (on) max | 80.0 mΩ | Mounting | THT |
QG max | 161.0 nC |
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In Stock: 6.368
Minimum Order: 1
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $11,706 | $11,71 |
10+ | $11,215 | $112,15 |
30+ | $10,365 | $310,95 |
90+ | $9,623 | $866,07 |
I prezzi sottostanti sono solo di riferimento.