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IPW65R080CFD +BOM

Introducing the IPW65R080CFD: Your solution for N-Channel MOSFET Transistor needs

Produttore:

Infineon
ProduttorePart #:

IPW65R080CFD
Scheda dati:

IPW65R080CFD Scheda dati (PDF)
IDpuls Max:

137.0 A
RthJC Max:

0.32 K/W
RthJA Max:

62.0 K/W
Ptot Max:

391.0 W
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPW65R080CFD

IPW65R080CFD Descrizione generale

The IPW65R080CFD power MOSFET transistor is a game-changer when it comes to efficiency and reliability in various applications. With an impressive on-state resistance of 0.08 ohms and a robust drain current rating of 65A, this transistor is a top choice for power management systems, motor control, and other high-power needs. Its TO-247 package ensures superior thermal resistance and power dissipation capabilities, allowing it to operate seamlessly even in extreme temperature conditions. The maximum junction temperature of 175°C further guarantees long-term performance and durability under challenging circumstances. Additionally, the IPW65R080CFD boasts low gate charge and gate-source voltage ratings, facilitating swift switching speeds and minimal power loss during operation. Its capability to handle high currents efficiently makes it a reliable option for high frequency and high-power applications that demand utmost effectiveness and dependability

Caratteristiche principali

Advanced power electronics technology
Efficient energy management solutions
High-performance switching devices
Simplified thermal design options
Compact and reliable packaging designs
Optimized energy efficiency performance

Applicazione

Eco-friendly power solutions
Intelligent power control
Robust electrical systems

Specifiche

IDpuls max	137.0 A	RthJC max	0.32 K/W
RthJA max	62.0 K/W	Ptot max	391.0 W
VDS max	650.0 V	Polarity	N
ID max	43.3 A	RDS (on) max	80.0 mΩ
Mounting	THT	Special Features	fast recovery diode
VGS(th) max	4.5 V	VGS(th) min	3.5 V
Operating Temperature max	150.0 °C	Operating Temperature min	-55.0 °C

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