Metodo di pagamento
IPW65R041CFD +BOM
Trans MOSFET N-CH 700V 68.5A 3-Pin(3+Tab) TO-247 Tube
TO-247-3-
Produttore:
-
ProduttorePart #:
IPW65R041CFD
-
Scheda dati:
-
Pbfree Code:
Yes
-
Part Life Cycle Code:
Active
-
Pin Count:
3
-
Reach Compliance Code:
compliant
-
EDA/CAD Modelli:
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IPW65R041CFD, guaranteed quotes back within 12hr.
Disponibilità: 6586 PZ
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
Caratteristiche principali
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson Qg and Eoss
- Easy to use/drive
- Pb-free plating, Halogen free mold compound
- Qualified for industrial grade applications according to JEDEC
- (J-STD20 and JESD22)
Specifiche
Source Content uid | IPW65R041CFD | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 3 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 2185 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 650 V | Drain Current-Max (ID) | 68.5 A |
Drain-source On Resistance-Max | 0.041 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 500 W |
Pulsed Drain Current-Max (IDM) | 255 A | Surface Mount | NO |
Terminal Finish | TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 68.5 A |
Rds On - Drain-Source Resistance | 37 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 3.5 V | Qg - Gate Charge | 300 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 500 W | Channel Mode | Enhancement |
Tradename | CoolMOS | Series | CoolMOS CFD2 |
Fall Time | 8 ns | Height | 21.1 mm |
Length | 16.13 mm | Product Type | MOSFET |
Rise Time | 28 ns | Factory Pack Quantity | 240 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 127 ns | Typical Turn-On Delay Time | 34 ns |
Width | 5.21 mm | Part # Aliases | IPW65R041CFDFKSA1 SP000756288 IPW65R041CFDFKSA1 |
Unit Weight | 0.211644 oz |
Politiche di servizio e altro
Relativi al servizio post-vendita e alla liquidazione
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
In Stock: 6.586
Minimum Order: 1
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $5,218 | $5,22 |
10+ | $4,567 | $45,67 |
30+ | $4,168 | $125,04 |
90+ | $3,836 | $345,24 |
I prezzi sottostanti sono solo di riferimento.