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IPW60R018CFD7XKSA1 +BOM

Characteristics: High-power N-channel MOSFET with a maximum voltage of 600V

Produttore:

INFINEON
ProduttorePart #:

IPW60R018CFD7XKSA1
Scheda dati:

IPW60R018CFD7XKSA1 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPW60R018CFD7XKSA1

IPW60R018CFD7XKSA1 Descrizione generale

The IPW60R018CFD7XKSA1 is a top-of-the-line 600V, 29A CoolMOS™ CFD7 Power MOSFET produced by Infineon Technologies. Its exceptional low on-resistance of 180 mΩ and high frequency figure of merit (FOM) make it the go-to choice for efficient power conversion applications. Utilizing the latest CFD7 technology, this device sets new standards in terms of efficiency, thermal management, and reliability. Housed in a TO-247 package, the IPW60R018CFD7XKSA1 offers easy installation and efficient thermal dissipation in a variety of power electronic systems. With applications ranging from switching power supplies to motor control and power inverters in industrial, automotive, and consumer electronics, this MOSFET is versatile and highly effective. Its key features, including a gate charge of 23.9 nC, a gate-source threshold voltage of 2.3V, and a maximum operating temperature of 150°C, make it a standout choice in the market. Furthermore, its enhanced switching behavior, reduced switching losses, and improved EMI performance solidify its position as a leader in the industry

Applicazione

SWITCHING

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	52 Weeks
Avalanche Energy Rating (Eas)	582 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	101 A
Drain-source On Resistance-Max	0.018 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	416 W
Pulsed Drain Current-Max (IDM)	495 A	Surface Mount	NO
Terminal Finish	TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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