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IPD60R600P6 +BOM

TO-252-2 (DPAK) 63W Power MOSFET

Produttore:

INFINEON
ProduttorePart #:

IPD60R600P6
Scheda dati:

IPD60R600P6 Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPD60R600P6

IPD60R600P6 Descrizione generale

Boasting impressive specifications and top-notch performance, the IPD60R600P6 emerges as a standout power MOSFET transistor suitable for a diverse range of applications. Featuring a robust 600V drain-source voltage rating and a continuous drain current of 60A, this MOSFET is well-equipped to tackle high-power demands with confidence. Its low on-resistance of 0.06 ohms plays a pivotal role in minimizing power losses and enhancing overall efficiency, making it an ideal candidate for power-sensitive applications. Furthermore, Infineon Technologies' cutting-edge technology ensures that the IPD60R600P6 delivers not only reliable operation but also exceptional thermal performance. Its TO-252 package with a surface-mount design streamlines installation and integration into electronic circuits, adding to its appeal. Whether it's power supplies, motor control, or other high-power applications, this MOSFET proves to be a valuable asset, capable of handling high current and voltage levels while keeping power dissipation to a minimum. With a strong emphasis on efficiency and reliability, the IPD60R600P6 presents itself as a versatile and trustworthy option for demanding applications, consistently delivering superior performance and peace of mind

Applicazione

PFC stages, hard switching PWM stages and resonant switching stages

for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom

and UPS.

Specifiche

Source Content uid	IPD60R600P6	Pbfree Code	No
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Avalanche Energy Rating (Eas)	133 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	7.3 A
Drain-source On Resistance-Max	0.6 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	18 A	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	GULL WING
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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