Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

IPD30N06S4L-23 +BOM

IPD30N06S4L-23 TO-252-3 MOSFETs ROHS Product Description

Produttore:

INFINEON
ProduttorePart #:

IPD30N06S4L-23
Scheda dati:

IPD30N06S4L-23 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPD30N06S4L-23

IPD30N06S4L-23 Descrizione generale

The IPD30N06S4L-23 power MOSFET transistor is a reliable and efficient component for high current, high power applications. With a voltage rating of 60V and a continuous current rating of 30A, this transistor is well-equipped to handle demanding tasks. Its low on-resistance of 0.023 ohms ensures minimal power loss and greater efficiency, making it a standout choice for projects requiring high power output. Additionally, its fast switching speed enables quick responses in high-speed circuits, enhancing overall performance

Specifiche

Source Content uid	IPD30N06S4L-23	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	4
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	18 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	60 V
Drain Current-Max (ID)	30 A	Drain-source On Resistance-Max	0.023 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	36 W
Pulsed Drain Current-Max (IDM)	120 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	30 A	Rds On - Drain-Source Resistance	18 mOhms
Vgs - Gate-Source Voltage	- 16 V, + 16 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	21 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	36 W
Channel Mode	Enhancement	Tradename	OptiMOS
Series	OptiMOS-T2	Fall Time	3 ns
Height	2.3 mm	Length	6.5 mm
Product Type	MOSFET	Rise Time	1 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	4 ns	Width	6.22 mm
Part # Aliases	SP000374320 IPD3N6S4L23XT IPD30N06S4L23ATMA1	Unit Weight	0.011640 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..