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Infineon IPD034N06N3G N-channel MOSFET Transistor, 100 A, 60 V, 3-Pin TO-252
SOT-252Produttore:
ProduttorePart #:
IPD034N06N3G
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
4
Reach Compliance Code:
compliant
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Infineon Technologies presents the IPD034N06N3G power MOSFET as a best-in-class offering within the OptiMOS™ 3 lineup, renowned for its high efficiency and superior performance characteristics. Delivering a maximum drain-source voltage of 60 volts, this MOSFET caters to the needs of a wide range of low to medium voltage applications, providing versatility and reliability in various power conversion scenarios. Its outstanding current handling capability, capable of supporting continuous drain currents up to 75 amperes, positions it as a top choice for high-power applications that prioritize performance and endurance. Featuring an impressively low on-resistance of just 3.4 milliohms at a gate-source voltage of 10 volts, the IPD034N06N3G ensures minimal power dissipation and optimal efficiency during switching activities. Additionally, with a gate charge of 40 nanocoulombs, this MOSFET demonstrates efficient and effective switching characteristics for seamless operation. Packaged in the convenient and efficient TO-252 (DPAK) form factor, this MOSFET strikes an ideal balance between thermal performance and ease of installation, making it a go-to component for demanding power conversion applications
Source Content uid | IPD034N06N3G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 4 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Avalanche Energy Rating (Eas) | 149 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 100 A | Drain-source On Resistance-Max | 0.0034 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 167 W |
Pulsed Drain Current-Max (IDM) | 400 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | TIN |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Prodotto 365 giorni
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Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $1,271 | $1,27 |
10+ | $1,074 | $10,74 |
30+ | $0,967 | $29,01 |
100+ | $0,845 | $84,50 |
500+ | $0,758 | $379,00 |
1000+ | $0,734 | $734,00 |
I prezzi sottostanti sono solo di riferimento.