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IPD031N06L3G +BOM
60V N-Channel Power MOSFET with 100A current rating
TO-252-3-
Produttore:
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ProduttorePart #:
IPD031N06L3G
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Scheda dati:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Pin Count:
4
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Reach Compliance Code:
compliant
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EDA/CAD Modelli:
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IPD031N06L3G Descrizione generale
The IPD031N06L3G Power Field-Effect Transistor is a high-performing component designed for a variety of electronic applications. With a current rating of 100A and a voltage rating of 60V, this N-Channel transistor offers reliable performance in demanding circuit designs. The low on-resistance of 0.0031ohm ensures efficient power delivery, making it ideal for power management systems. The TO-252AA package, featuring a Green Plastic housing, provides a durable and environmentally friendly solution for circuit integration. This 1-Element Silicon Metal-oxide Semiconductor FET is designed for ease of use with its 3 PIN configuration, making installation quick and simple
Caratteristiche principali
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21 *
Specifiche
Source Content uid | IPD031N06L3G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Pin Count | 4 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE | Avalanche Energy Rating (Eas) | 149 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 100 A |
Drain-source On Resistance-Max | 0.0031 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 167 W | Pulsed Drain Current-Max (IDM) | 400 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Series | OptiMOS™ |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 93µA | Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
Power Dissipation (Max) | 167W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | IPD031 |
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In Stock: 5.444
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