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IPB027N10N5 +BOM

High-power switching device for efficient voltage regulation

Produttore:

INFINEON
ProduttorePart #:

IPB027N10N5
Scheda dati:

IPB027N10N5 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

461 mJ
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IPB027N10N5

IPB027N10N5 Descrizione generale

The IPB027N10N5 OptiMOS™ 5 100V power MOSFET by Infineon is designed to meet the demanding requirements of synchronous rectification in telecom blocks and server power supply applications. Its lower RDS(on) of 22% compared to similar devices sets it apart, making it a top choice for applications where power density and efficiency are crucial. These features, combined with its low on-state resistance, make it an industry-leading solution for Or-ing, hotswap, and battery protection needs in the telecom and server power sectors

Caratteristiche principali

Ideal for high frequency switching and sync. rec.
Excellent gate charge x RDS(on) product (FOM)
Very low on-resistance RDS(on)
N-channel, normal level
100% avalanche tested
Pb-free plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Halogen-free according to IEC61249-2-21

Applicazione

SWITCHING

Specifiche

Source Content uid	IPB027N10N5	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	461 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	120 A	Drain-source On Resistance-Max	0.0027 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263AB
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	480 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Height	4.4 mm
Length	10 mm	Product Type	MOSFET
Subcategory	MOSFETs	Width	9.25 mm
Unit Weight	0.139332 oz

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