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2N4124 +BOM

25V 625mW 120@2mA,1V 200mA NPN TO-92(TO-226) Bipolar Transistors - BJT ROHS

Produttore:

Onsemi
ProduttorePart #:

2N4124
Altro nome:

2N4124 PBFREE
Scheda dati:

2N4124 Scheda dati (PDF)
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

25 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 2N4124

2N4124 Information

Description

The 2N4124 is a general-purpose NPN transistor from Texas Instruments, packaged in a TO-92 format. It has a maximum voltage rating of 25V, a current rating of 0.2A, and a power dissipation of 625mW. This transistor is suitable for various applications such as amplifiers, switches, and drivers. Its high-quality materials, state-of-the-art manufacturing process, and total quality control ensure reliable performance. The device also features advanced design for high performance, precise measurement guaranteed, and long-lasting reliability ensured.

Package

According to the product information, the package type of 2N4124 is "TO-92 Box".

Pinout

The 2N4124 is a NPN transistor with a TO-92 package, having 3 pins:

Base (B): Input signal
Collector (C): Output signal
Emitter (E): Ground reference

It's a general-purpose transistor suitable for various applications such as amplifiers, switches, and voltage regulators.

Manufacturer

The manufacturer of the 2N4124 is Texas Instruments (TI).

Applications

The 2N4124 Trans GP BJT NPN 25V 0.2A 625mW 3-Pin TO-92 Box component from Texas Instruments is a general-purpose amplifier diode. Its application areas include:

Electronics systems requiring amplification or switching
Power supplies and motor control circuits
Audio equipment, such as amplifiers and tone generators
Signal processing and detection applications

Equivalent

The equivalent products of 2N4124 are:

BC547
KBC1818
MMBT3904
PN2222A
TIP39C

Please note that the equivalent products may vary depending on the specific application and requirements. It's always recommended to consult the datasheet or manufacturer's documentation for more information.

Specifiche

Product Category	Bipolar Transistors - BJT	Mounting Style	Through Hole
Transistor Polarity	NPN	Configuration	Single
Collector- Emitter Voltage VCEO Max	25 V	Collector- Base Voltage VCBO	30 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	300 mV
Maximum DC Collector Current	200 mA	Pd - Power Dissipation	625 mW
Gain Bandwidth Product fT	300 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Continuous Collector Current	200 mA
DC Collector/Base Gain hfe Min	120	Height	5.33 mm
Length	5.2 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	5000	Subcategory	Transistors
Technology	Si	Width	4.19 mm
Package/Case	TO-92-3

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