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R6020ENX +BOM

Power MOSFET Low-noise 600V 20A TO-220FM

Produttore:

Rohm Semiconductor
ProduttorePart #:

R6020ENX
Scheda dati:

R6020ENX Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

18 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per R6020ENX

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

R6020ENX Descrizione generale

The R6020ENX is a high-performance Power Field-Effect Transistor designed for demanding applications. With a current rating of 30A and a voltage rating of 600V, this N-Channel Silicon Metal-oxide Semiconductor FET offers efficient power handling and low on-resistance of 0.13ohm. The TO-220AB package ensures easy installation and thermal management, making it suitable for a wide range of industrial and consumer electronics projects. This transistor is ROHS COMPLIANT, meeting environmental standards for hazardous substance control. The TO-220FM package includes 3 pins for easy integration into circuit designs

Caratteristiche principali

1) Low on-resistance
2) Fast switching
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	18 Weeks
Application	SWITCHING	Case Connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Surface Mount	NO	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	10
Transistor Element Material	SILICON	Product Category	MOSFET
REACH	Details	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	20 A	Rds On - Drain-Source Resistance	170 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	60 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	68 W
Channel Mode	Enhancement	Series	Super Junction-MOS EN
Fall Time	67 ns	Height	15.4 mm
Length	10.3 mm	Product Type	MOSFET
Rise Time	53 ns	Factory Pack Quantity	500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	150 ns	Typical Turn-On Delay Time	35 ns
Width	4.8 mm	Part # Aliases	R6020ENXC7G
Unit Weight	0.068784 oz

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