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PSMN1R0-30YLC,115 +BOM

Logic level SOIC 4-Pin package

Produttore:

Nexperia USA Inc.
ProduttorePart #:

PSMN1R0-30YLC,115
Scheda dati:

PSMN1R0-30YLC,115 Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

4
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PSMN1R0-30YLC,115

E-mail: [email protected]

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PSMN1R0-30YLC,115 Descrizione generale

The PSMN1R0-30YLC,115 is a high-performance logic level enhancement mode N-channel MOSFET housed in an LFPAK package. This cutting-edge product offers superior functionality and efficiency, making it ideal for a variety of applications in the industrial, communications, and domestic sectors. With its advanced design and robust construction, this MOSFET is engineered to deliver exceptional performance and reliability in even the most demanding environments

Caratteristiche principali

Low power loss and high efficiency
Excellent thermal management capabilities
Durable construction for long lifespan

Applicazione

Renewable energy systems
Electric vehicle charging
Power distribution

Specifiche

Source Content uid	PSMN1R0-30YLC,115	Part Life Cycle Code	Active
Pin Count	4	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Additional Feature	HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas)	259 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	100 A	Drain-source On Resistance-Max	0.0014 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-235
JESD-30 Code	R-PSSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Pulsed Drain Current-Max (IDM)	1450 A	Reference Standard	IEC-60134
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.15mOhm @ 25A, 10V	Vgs(th) (Max) @ Id	1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	103.5 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6645 pF @ 15 V	Power Dissipation (Max)	272W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	PSMN1R0

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