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Vedi Specifiche Tecniche

PMV32UP,215 +BOM

20 V, 4 A P-channel Trench MOSFET

Produttore:

Nexperia USA Inc.
ProduttorePart #:

PMV32UP,215
Scheda dati:

PMV32UP,215 Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PMV32UP,215

E-mail: [email protected]

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PMV32UP,215 Descrizione generale

Safety is always a top priority, which is why the PMV32UP,215 is equipped with essential protection features like undervoltage lockout and overcurrent protection. These built-in safeguards ensure the longevity of the driver and connected MOSFETs, providing peace of mind knowing that your system is well-protected against potential damage. Trust in the PMV32UP,215 for unparalleled performance, reliability, and safety in all your power management applications

Caratteristiche principali

Efficient energy harvesting for renewable systems
High-frequency operation for advanced radar applications
Fast rise and fall times for high-speed switching
Robust thermal design for reliability in harsh environments

Applicazione

Pulse width modulation
Switching power supply
Current limiting

Specifiche

Source Content uid	PMV32UP,215	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8541.21.00.75
Date Of Intro	2017-02-01	Application	SWITCHING
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V	Rds On (Max) @ Id, Vgs	36mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA	Gate Charge (Qg) (Max) @ Vgs	15.5 nC @ 4.5 V
Vgs (Max)	±8V	Input Capacitance (Ciss) (Max) @ Vds	1890 pF @ 10 V
Power Dissipation (Max)	510mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	PMV32

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..