Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

NTD18N06LT4G +BOM

Single N-Channel Logic Level Power MOSFET 60V, 18A, 65mΩ, DPAK (SINGLE GAUGE) TO-252, 2500-REEL

Produttore:

onsemi
ProduttorePart #:

NTD18N06LT4G
Scheda dati:

NTD18N06LT4G Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTD18N06LT4G

Caratteristiche principali

AEC Q101 Qualified − NTDV18N06L
These Devices are Pb−Free and are RoHS Compliant

Specifiche

Source Content uid	NTD18N06LT4G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	not_compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	66 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE	Avalanche Energy Rating (Eas)	72 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	18 A
Drain-source On Resistance-Max	0.065 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	80 pF	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	55 W
Power Dissipation-Max (Abs)	55 W	Pulsed Drain Current-Max (IDM)	54 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	120 ns	Turn-on Time-Max (ton)	180 ns
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	18 A	Rds On - Drain-Source Resistance	65 mOhms
Vgs - Gate-Source Voltage	- 5 V, + 5 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	11 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	55 W
Channel Mode	Enhancement	Series	NTD18N06L
Fall Time	38 ns	Forward Transconductance - Min	13.5 S
Height	2.38 mm	Length	6.73 mm
Product Type	MOSFET	Rise Time	79 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MOSFET
Typical Turn-Off Delay Time	19 ns	Typical Turn-On Delay Time	9.9 ns
Width	6.22 mm	Unit Weight	0.011640 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..