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Vedi Specifiche Tecniche

NTBG160N120SC1 +BOM

Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L

Produttore:

ON Semiconductor, LLC
ProduttorePart #:

NTBG160N120SC1
Scheda dati:

NTBG160N120SC1 Scheda dati (PDF)
MSL Temp (°C):

245
Container Type:

REEL
Technology:

SiC
Mounting Style:

SMD/SMT
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTBG160N120SC1

NTBG160N120SC1 Descrizione generale

Silicon Carbide (SiC) MOSFET uses a completely new technology thatprovidesuperiorswitching performanceandhigherreliability compared to Silicon. In addition, the low ON resistance and compact chipsizeensurelowcapacitanceandgatecharge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Caratteristiche principali

Drain-Source Voltage (VDS): 1200V
Continuous Drain Current (ID): 160A
RDS(on) (Static Drain-Source On-Resistance): 0.06 Ohms (typical) at VGS = 20V, ID = 80A
Gate-Source Voltage (VGS): ±20V
Gate Threshold Voltage (VGS(th)): 4.5V to 6.5V
Total Gate Charge (Qg): 156nC (typical) at VDS = 900V, ID = 80A
Power Dissipation (PD): 970W
Operating Temperature Range: -55°C to 175°C

Applicazione

The NTBG160N120SC1 is commonly used in applications such as power supplies, motor drives, electric vehicles, solar inverters, and industrial equipment where high-voltage and high-current capabilities are required.

Specifiche

Status	Active	Case Outline
MSL Temp (°C)	245	Container Type	REEL
Product Category	MOSFET	Technology	SiC
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	19.5 A	Rds On - Drain-Source Resistance	224 mOhms
Vgs - Gate-Source Voltage	- 15 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4.3 V
Qg - Gate Charge	33.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	136 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	7.4 ns	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	800
Subcategory	MOSFETs	Transistor Type	N-Channel
Typical Turn-Off Delay Time	15 ns	Typical Turn-On Delay Time	11 ns

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