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IRLR2908PBF +BOM

Silicon-based N-Channel MOSFET with 80V Voltage, 39A Current, and DPAK Tube Packaging

Produttore:

International Rectifier
ProduttorePart #:

IRLR2908PBF
Scheda dati:

IRLR2908PBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRLR2908PBF

E-mail: [email protected]

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tel: +852 95804164

IRLR2908PBF Descrizione generale

Step up your power management game with the IRLR2908PBF Power FET. Boasting a maximum current handling capacity of 30A and a voltage rating of 80V, this N-Channel MOSFET is perfect for demanding applications. The ultra-low on-resistance of 0.028ohm ensures efficient power delivery with minimal losses. Encased in a TO-252AA package, also known as DPAK-3, this FET guarantees easy installation and thermal performance. Plus, its Lead-Free and Plastic composition makes it a sustainable and durable choice for your electronic designs

Caratteristiche principali

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Applicazione

SWITCHING

Specifiche

Source Content uid	IRLR2908PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	Avalanche Energy Rating (Eas)	250 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	30 A
Drain-source On Resistance-Max	0.028 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	120 W	Pulsed Drain Current-Max (IDM)	150 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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