Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Optimized for refrigeration systems
TO-274-3Produttore:
Infineon
ProduttorePart #:
IRG7PSH73K10PBF
Scheda dati:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The IRG7PSH73K10PBF IGBT transistor is a versatile and high-performance device designed for demanding applications. With a collector current of 220A and a collector-emitter voltage Vces of 1200V, this transistor can handle high-power loads with ease. The N-channel design ensures efficient switching and low conduction losses, making it ideal for power electronics applications. The TO-247AA case style offers easy mounting and efficient thermal management, allowing for reliable operation in various environments. With a power dissipation max of 1.15kW, this transistor can handle high-power applications without compromising performance. The wide operating temperature range of -55°C to +175°C ensures reliable operation in extreme conditions, making the IRG7PSH73K10PBF an excellent choice for applications requiring high power and reliability
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 220 A |
Pd - Power Dissipation | 1.15 kW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Continuous Collector Current Ic Max | 220 A |
Gate-Emitter Leakage Current | 400 nA | Height | 20.8 mm |
Length | 16.1 mm | Product Type | IGBT Transistors |
Factory Pack Quantity | 25 | Subcategory | IGBTs |
Width | 5.5 mm | Part # Aliases | SP001549408 |
Unit Weight | 0.211644 oz |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $2,660 | $2,66 |
200+ | $1,030 | $206,00 |
500+ | $0,994 | $497,00 |
1000+ | $0,975 | $975,00 |
I prezzi sottostanti sono solo di riferimento.
Tutte le distinte materiali (BOM) possono essere inviate via e-mail a
[email protected],
oppure compila il modulo sottostante per richiedere un preventivo per IRG7PSH73K10PBF, preventivi garantiti entro
12 ore.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren