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IRG4PH40KDPBF +BOM

A semiconductor device housed in a TO-247 package, consisting of an N-channel IGBT rated for 30A and 1200V, integrated with a HEXFRED Diode

Produttore:

International Rectifier
ProduttorePart #:

IRG4PH40KDPBF
Scheda dati:

IRG4PH40KDPBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Date Of Intro:

1997-08-13
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRG4PH40KDPBF

E-mail: [email protected]

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tel: +852 95804164

IRG4PH40KDPBF Descrizione generale

The IRG4PH40KDPBF is an IGBT with a TO-247AC housing type, designed for high-power applications. With a collector-emitter breakdown voltage of 1200 V, a low collector-emitter saturation voltage of 2.74 V, and a current release time of 220 ns, this IGBT offers fast and reliable switching capabilities. Additionally, its power dissipation of 160 W ensures consistent performance in demanding environments. Whether used in motor control, power supply, or renewable energy systems, the IRG4PH40KDPBF delivers efficient and precise operation

Caratteristiche principali

High short circuit rating optimized for motor control,
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
Combines low conduction losses with high
switching speed
Tighter parameter distribution and higher efficiency
than previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Lead-Free
Benefits
Latest generation 4 IGBTs offer highest power density
motor controls possible
HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
This part replaces the IRGPH40KD2 and IRGPH40MD2
products
For hints see design tip 97003

Specifiche

Source Content uid	IRG4PH40KDPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Date Of Intro	1997-08-13	Additional Feature	LOW CONDUCTION LOSS
Case Connection	COLLECTOR	Collector Current-Max (IC)	30 A
Collector-Emitter Voltage-Max	1200 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	3 V	Gate-Emitter Voltage-Max	20 V
JEDEC-95 Code	TO-247AC	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	160 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	MOTOR CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	730 ns
Turn-on Time-Nom (ton)	82 ns

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