Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
40 amperes, 60 volts, with a resistance of 0.016 ohms, this N-channel silicon power MOSFET is designated as FQPF65N06
TO-220F-3Produttore:
ON SEMICONDUCTOR
ProduttorePart #:
FQPF65N06
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
End Of Life
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
Designed for efficiency and performance, the FQPF65N06 is a top choice for designers seeking a power MOSFET that can meet the demands of modern electronic systems. Its optimized construction and advanced technology ensure low on-state resistance and high switching performance, making it a valuable component for a wide range of applications. From power supplies to audio amplifiers, the FQPF65N06 offers the reliability and performance needed to drive innovation and enhance the functionality of electronic devices
Source Content uid | FQPF65N06 | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 6 Weeks |
Avalanche Energy Rating (Eas) | 645 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (Abs) (ID) | 40 A | Drain Current-Max (ID) | 40 A |
Drain-source On Resistance-Max | 0.016 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 56 W |
Pulsed Drain Current-Max (IDM) | 160 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $2,223 | $2,22 |
10+ | $1,934 | $19,34 |
50+ | $1,754 | $87,70 |
100+ | $1,568 | $156,80 |
500+ | $1,483 | $741,50 |
1000+ | $1,448 | $1.448,00 |
I prezzi sottostanti sono solo di riferimento.
Tutte le distinte materiali (BOM) possono essere inviate via e-mail a
[email protected],
oppure compila il modulo sottostante per richiedere un preventivo per FQPF65N06, preventivi garantiti entro
12 ore.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren