Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
High-power switching device for efficient DC-DC conversio
TO-220F-3Produttore:
Fairchild Semiconductor
ProduttorePart #:
FQPF4N60
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Avalanche Energy Rating (Eas):
260 mJ
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
Product FQPF4N60 is a high-performance N-channel MOSFET suitable for demanding applications requiring high power capabilities. With a VDSS of 600V and a continuous drain current of 4A, this MOSFET offers reliable performance in various scenarios. Its low gate charge enables quick switching speeds and reduces power losses, enhancing overall efficiency. The low on-state resistance of 1.5 ohms helps minimize power dissipation, making it an excellent choice for power-sensitive applications
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | |
Avalanche Energy Rating (Eas) | 260 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 600 V |
Drain Current-Max (ID) | 2.6 A | Drain-source On Resistance-Max | 2.2 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | NOT APPLICABLE |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | NOT APPLICABLE |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 10.4 A |
Qualification Status | COMMERCIAL | Surface Mount | NO |
Terminal Finish | MATTE TIN | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $0,709 | $0,71 |
200+ | $0,275 | $55,00 |
500+ | $0,264 | $132,00 |
1000+ | $0,260 | $260,00 |
I prezzi sottostanti sono solo di riferimento.
Tutte le distinte materiali (BOM) possono essere inviate via e-mail a
[email protected],
oppure compila il modulo sottostante per richiedere un preventivo per FQPF4N60, preventivi garantiti entro
12 ore.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren