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Power Field-Effect Transistor for High Current Applications
TO-220-3Produttore:
Onsemi
ProduttorePart #:
FQPF11N40C
Scheda dati:
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelli:
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Designed for efficiency and performance, the FQPF11N40C power MOSFET combines advanced technology with superior construction. ON Semiconductor's expertise in semiconductor solutions is evident in the design and functionality of this device, which offers low on-state resistance and high switching performance. The FQPF11N40C is a versatile component suitable for a wide range of applications, including power factor correction and lighting ballasts, where reliability and precision are essential
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 400 V |
Id - Continuous Drain Current | 11 A | Rds On - Drain-Source Resistance | 530 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 35 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 44 W |
Channel Mode | Enhancement | Tradename | QFET |
Series | FQPF11N40C | Configuration | Single |
Fall Time | 81 ns | Forward Transconductance - Min | 7.1 S |
Height | 16.07 mm | Length | 10.36 mm |
Product Type | MOSFET | Rise Time | 89 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 81 ns | Typical Turn-On Delay Time | 14 ns |
Width | 4.9 mm | Part # Aliases | FQPF11N40C_NL |
Unit Weight | 0.068784 oz |
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