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MOSFET QF 900V 2.3OHM D2PAK
TO-263-3Produttore:
FAIRCHILD
ProduttorePart #:
FQB5N90
Scheda dati:
Part Life Cycle Code:
Obsolete
Pin Count:
3
ECCN Code:
EAR99
HTS Code:
8541.29.00.95
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The FQB5N90 is a high-performance power MOSFET designed using innovative technology to enhance its efficiency and reliability. With a focus on reducing on-state resistance, this N-Channel MOSFET delivers superior switching performance and robust avalanche energy strength. Whether it is for switched mode power supplies, active power factor correction (PFC), or electronic lamp ballasts, this device is engineered to meet the demanding requirements of modern electronics
Source Content uid | FQB5N90 | Part Life Cycle Code | Obsolete |
Pin Count | 3 | Reach Compliance Code | |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Avalanche Energy Rating (Eas) | 660 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 900 V |
Drain Current-Max (ID) | 5.4 A | Drain-source On Resistance-Max | 2.3 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e0 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 158 W | Pulsed Drain Current-Max (IDM) | 21.6 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | TIN LEAD | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Prodotto 365 giorni
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1+ | - | - |
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