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Power MOSFET, N-Channel, QFET®, 600 V, 18.5 A, 380 mΩ, TO-3P
TO-3P-3LProduttore:
Fairchild Semiconductor
ProduttorePart #:
FQA19N60
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The FQA19N60 is a cutting-edge N-Channel power MOSFET that stands out due to its advanced features and superior performance. Its innovative design incorporates a proprietary planar stripe and DMOS technology, resulting in enhanced on-state resistance reduction and exceptional switching capabilities. Additionally, the device boasts high avalanche energy strength, making it a reliable choice for demanding applications
Source Content uid | FQA19N60 | Pbfree Code | Yes |
Part Life Cycle Code | Obsolete | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 4 Weeks |
Avalanche Energy Rating (Eas) | 1150 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 18.5 A |
Drain-source On Resistance-Max | 0.38 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 300 W |
Pulsed Drain Current-Max (IDM) | 74 A | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 18.5 A |
Rds On - Drain-Source Resistance | 380 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 70 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 W | Channel Mode | Enhancement |
Tradename | QFET | Series | FQA19N60 |
Fall Time | 135 ns | Forward Transconductance - Min | 16 S |
Height | 20.1 mm | Length | 16.2 mm |
Product Type | MOSFET | Rise Time | 210 ns |
Factory Pack Quantity | 450 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 150 ns | Typical Turn-On Delay Time | 65 ns |
Width | 5 mm | Part # Aliases | FQA19N60_NL |
Unit Weight | 0.162260 oz |
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