Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

FDMS7660 +BOM

N-Channel PowerTrench® MOSFET 30V, 2.8mΩ

Produttore:

Fairchild Semiconductor
ProduttorePart #:

FDMS7660
Scheda dati:

FDMS7660 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMS7660

FDMS7660 Descrizione generale

With the FDMS7660, engineers can trust in a MOSFET that has been specifically crafted to boost overall efficiency and mitigate switch node ringing in DC/DC converters. This component is versatile, compatible with both synchronous and conventional switching PWM controllers. Its features include low gate charge, negligible r_DS(on), swift switching speed, and reliable body diode reverse recovery performance. The FDMS7660 is a reliable choice for optimizing efficiency and performance in diverse electronic systems

Caratteristiche principali

Max r_DS(on) = 2.8 mΩ at V_GS = 10 V, I_D = 25 A
Max r_DS(on) = 3.5 mΩ at V_GS = 4.5 V, I_D = 19 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant

Applicazione

This product is general usage and suitable for many different applications.

Specifiche

Source Content uid	FDMS7660	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Avalanche Energy Rating (Eas)	128 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	25 A	Drain-source On Resistance-Max	0.0028 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-N5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	78 W
Pulsed Drain Current-Max (IDM)	150 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..