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This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.
WDFN EPProduttore:
Fairchild Semiconductor
ProduttorePart #:
FDMC8878
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Lifetime Buy
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
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This N-Channel MOSFET is a rugged gate version of an advanced Power Trench process. It has been optimized for power management applications.
Source Content uid | FDMC8878 | Pbfree Code | Yes |
Part Life Cycle Code | Lifetime Buy | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 53 Weeks, 5 Days |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 9.6 A |
Drain-source On Resistance-Max | 0.014 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-PDSO-N5 | JESD-609 Code | e4 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 31 W |
Pulsed Drain Current-Max (IDM) | 60 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | NICKEL PALLADIUM GOLD SILVER |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $0,610 | $0,61 |
200+ | $0,237 | $47,40 |
500+ | $0,228 | $114,00 |
1000+ | $0,225 | $225,00 |
I prezzi sottostanti sono solo di riferimento.
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