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N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ
DPAKProduttore:
Fairchild Semiconductor
ProduttorePart #:
FDD8874
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Pin Count:
3
Avalanche Energy Rating (Eas):
240 mJ
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The FDD8874 N-Channel MOSFET stands out as a tailored solution for enhancing the efficiency of DC/DC converters, regardless of whether they employ synchronous or conventional switching PWM controllers. Its optimized characteristics, including low gate charge, low rDS(ON), and fast switching speed, underscore its suitability for modern power electronics applications. By prioritizing these attributes, this MOSFET is well-equipped to play a pivotal role in elevating the performance and energy efficiency of the systems it is employed in
Pbfree Code | Yes | Part Life Cycle Code | Active |
Pin Count | 3 | Reach Compliance Code | |
Avalanche Energy Rating (Eas) | 240 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 35 A | Drain-source On Resistance-Max | 0.0064 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252AA |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Qualification Status | COMMERCIAL | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $1,628 | $1,63 |
10+ | $1,397 | $13,97 |
30+ | $1,270 | $38,10 |
100+ | $1,127 | $112,70 |
500+ | $1,062 | $531,00 |
1000+ | $1,034 | $1.034,00 |
I prezzi sottostanti sono solo di riferimento.
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