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Vedi Specifiche Tecniche

FDC6301N +BOM

SuperSOT-6 MOSFETs ROHS

Produttore:

Onsemi
ProduttorePart #:

FDC6301N
Scheda dati:

FDC6301N Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDC6301N

FDC6301N Descrizione generale

FDC6301N is a cutting-edge dual N-Channel logic level enhancement mode field effect transistor that leverages a proprietary, high cell density, DMOS technology to deliver exceptional performance in low voltage applications. Notably, this transistor does not require bias resistors, making it an efficient replacement for multiple digital transistors. The FDC6301N's unique design and high cell density process result in minimal on-state resistance, further enhancing its suitability for a wide range of electronic applications. Engineers and designers can benefit from the simplified design and improved performance offered by this innovative transistor

Caratteristiche principali

25 V, 0.22 A continuous, 0.5 A Peak
R_DS(ON) = 5 Ω @ V_GS= 2.7 V
R_DS(ON) = 4 Ω @ V_GS= 4.5 V
Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5V
Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

Applicazione

This product is general usage and suitable for many different applications.

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	25 V
Id - Continuous Drain Current	220 mA	Rds On - Drain-Source Resistance	3.8 Ohms
Vgs - Gate-Source Voltage	- 500 mV, + 8 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	490 pC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	900 mW
Channel Mode	Enhancement	Series	FDC6301N
Configuration	Dual	Fall Time	4.5 ns
Forward Transconductance - Min	0.25 S	Height	1.1 mm
Length	2.9 mm	Product	MOSFET Small Signals
Product Type	MOSFET	Rise Time	4.5 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	2 N-Channel	Type	FET
Typical Turn-Off Delay Time	4 ns	Typical Turn-On Delay Time	5 ns
Width	1.6 mm	Part # Aliases	FDC6301N_NL
Unit Weight	0.001270 oz

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..