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A 300V N-channel MOSFET transistor capable of carrying 16A of current, packaged in an 8-pin TDSON EP format and delivered on tape and reel
8-PowerTDFNProduttore:
Infineon Technologies
ProduttorePart #:
BSC13DN30NSFDATMA1
Scheda dati:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
300 V
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The BSC13DN30NSFDATMA1 semiconductor device from Infineon Technologies is a powerful MOSFET designed for high-speed switching applications. With a maximum drain-source voltage of 30V and a continuous drain current of 13A, this device offers efficient power management and motor control. Its low on-resistance of 5.4mΩ ensures high efficiency in power switching tasks, while its low gate charge and fast switching characteristics provide high performance in demanding applications. The small form factor DFN5020-7 package type enhances thermal performance and saves space, making it ideal for compact electronic designs. Additionally, the device is RoHS compliant, meeting strict environmental standards for hazardous substances
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 300 V |
Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 130mOhm @ 16A, 10V | Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 150 V | Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC13DN30 |
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Prodotto 365 giorni
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