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N-Channel 150 V 87A (Tc) 139W (Tc) Surface Mount PG-TDSON-8-7
8-PowerTDFNProduttore:
Infineon Technologies
ProduttorePart #:
BSC093N15NS5ATMA1
Scheda dati:
Series:
OptiMOS™
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
150 V
EDA/CAD Modelli:
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Infineon Technologies' BSC093N15NS5ATMA1 power MOSFET is specifically engineered for automotive applications, boasting a drain-source voltage of 150V and a continuous drain current of 93A. With a low on-resistance of 6.5 mΩ, this MOSFET is designed to minimize power dissipation and improve overall efficiency, making it an excellent fit for electric power steering, engine control units, and battery management systems in automobiles. Its 5x6mm SMD leadless package facilitates seamless integration into automotive electronic systems, and its automotive-grade reliability ensures optimal performance in challenging automotive environments. The BSC093N15NS5ATMA1 is AEC-Q101 qualified, meaning it has undergone rigorous testing to meet the automotive industry's stringent quality standards, providing engineers with peace of mind regarding its durability and performance in automotive applications
Series | OptiMOS™ | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 87A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
Rds On (Max) @ Id, Vgs | 9.3mOhm @ 44A, 10V | Vgs(th) (Max) @ Id | 4.6V @ 107µA |
Gate Charge (Qg) (Max) @ Vgs | 40.7 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3230 pF @ 75 V | Power Dissipation (Max) | 139W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
Base Product Number | BSC093 |
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Prodotto 365 giorni
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