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STD14NM50N +BOM

STD14NM50N Overview: A Silicon Surface Mount Technology MOSFET, the STD14NM50N offers a maximum voltage of 500V and an on-resistance of 0

Produttore:

Stmicroelectronics
ProduttorePart #:

STD14NM50N
Scheda dati:

STD14NM50N Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per STD14NM50N

STD14NM50N Descrizione generale

The STD14NM50N is a high-voltage N-channel Power MOSFET specifically designed for demanding applications such as power supplies, motor control, and lighting systems. With a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 14A, this MOSFET is capable of efficiently handling moderate to high power loads. Its low on-resistance (Rds(on)) of 0.49 ohms helps to minimize power losses and enhance efficiency in applications where low voltage drop is critical. The gate threshold voltage (Vgs(th)) of 3V to 5V makes it compatible with standard logic level signals, while the gate-source voltage (Vgs) of ±20V ensures reliable operation within the specified voltage range. Enclosed in a TO-252 (DPAK) package, the MOSFET offers good thermal performance and easy mounting on a PCB. Furthermore, its maximum junction temperature of 150°C provides a comfortable margin for thermal management in high-power applications

Caratteristiche principali

Precise temperature control
Low power consumption and standby mode
Robust mechanical design
Safe operating temperature range

Applicazione

Portable electronic devices
Home entertainment systems
Medical monitoring equipment

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	500 V
Id - Continuous Drain Current	12 A	Rds On - Drain-Source Resistance	900 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	42 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	90 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	MDmesh	Series	STD14NM50N
Configuration	Single	Fall Time	32 ns
Product Type	MOSFET	Rise Time	9 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	MDmesh II Power MOSFET
Typical Turn-Off Delay Time	12 ns	Typical Turn-On Delay Time	15 ns
Unit Weight	0.011640 oz

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