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SI2319DS-T1-E3 +BOM

P-MOSFET transistor with unipolar operation, -40V voltage rating, and -2.3A current rating

Produttore:

Vishay
ProduttorePart #:

SI2319DS-T1-E3
Scheda dati:

SI2319DS-T1-E3 Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI2319DS-T1-E3

SI2319DS-T1-E3 Descrizione generale

The Vishay SI2319DS-T1-E3 P Channel Mosfet is a versatile component suitable for a wide range of electronic applications. Its P Channel design allows for easy integration into various circuit configurations. The 40V drain source voltage (Vds) rating provides ample headroom for voltage spikes and transient conditions. With a continuous drain current (Id) rating of 3A, this MOSFET can handle moderate power levels without overheating. The surface mount transistor mounting style simplifies assembly processes, making it ideal for automated production lines. The Rds(On) test voltage of 4.5V indicates low on-resistance, resulting in minimal power loss during operation. Despite not being RoHS compliant, the Vishay SI2319DS-T1-E3 remains a reliable choice for electronic design projects

Caratteristiche principali

Features:

Halogen-Free Option Available

Low-Side Switching

Low On-Resistance: 5 Ω

Low Threshold: 0.9 V (Typ.)

Fast Switching Speed: 35 ns (Typ.)

TrenchFET® Power MOSFETs: 1.5 V Rated

ESD Protected: 2000 VApplications:

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories

Battery Operated Systems

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	40 V
Id - Continuous Drain Current	3 A	Rds On - Drain-Source Resistance	82 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	17 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.25 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	25 ns	Forward Transconductance - Min	7 S
Height	1.45 mm	Length	2.9 mm
Product Type	MOSFET	Rise Time	15 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	7 ns	Width	1.6 mm
Part # Aliases	SI2319DS-T1-BE3 SI2319DS-E3	Unit Weight	0.000282 oz

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..