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SI1031R-T1-GE3 +BOM

Trans MOSFET P-CH 20V 0.14A 3-Pin SC-75A T/R

Produttore:

Vishay Intertechnology, Inc
ProduttorePart #:

SI1031R-T1-GE3
Scheda dati:

SI1031R-T1-GE3 Scheda dati (PDF)
Series:

TrenchFET®
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

20 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI1031R-T1-GE3

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

SI1031R-T1-GE3 Descrizione generale

MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 140mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 250mW; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jun-2015); Alternate Case Style: SOT-416; Current Id Max: -140mA; ESD HBM: 2kV; External Depth: 1.7mm; External Length / Height: 0.8mm; External Width: 1.6mm; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 250W; Pulse Current Idm: 500mA; SMD Marking: H; Voltage Vds Typ: -20V; Voltage Vgs Max: 6V; Voltage Vgs Rds on Measurement: 1.5V; Voltage Vgs th Max: -1.2V; Voltage Vgs th Min: -0.4V

Vishay Intertechnology, Inc Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	TrenchFET®
FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V	Current - Continuous Drain (Id) @ 25°C	140mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V	Rds On (Max) @ Id, Vgs	8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 4.5 V
Vgs (Max)	±6V	FET Feature	-
Power Dissipation (Max)	250mW (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	SI1031
feature-category	Power MOSFET	feature-material
feature-process-technology	TrenchFET	feature-configuration	Single
feature-channel-mode	Enhancement	feature-channel-type	P
feature-number-of-elements-per-chip	1	feature-maximum-drain-source-voltage-v	20
feature-maximum-gate-source-voltage-v	±6	feature-maximum-gate-threshold-voltage-v
feature-maximum-continuous-drain-current-a	0.14	feature-maximum-drain-source-resistance-mohm	[email protected]
feature-typical-gate-charge-vgs-nc	[email protected]	feature-typical-gate-charge-10v-nc
feature-typical-input-capacitance-vds-pf		feature-typical-output-capacitance-pf
feature-maximum-power-dissipation-mw	250	feature-packaging	Tape and Reel
feature-rad-hard		feature-pin-count	3
feature-cecc-qualified	No	feature-esd-protection	Yes
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	No	feature-svhc-exceeds-threshold	No

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