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RZM002P02T2L +BOM

Product RZM002P02T2L

Produttore:

Rohm Semiconductor
ProduttorePart #:

RZM002P02T2L
Scheda dati:

RZM002P02T2L Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per RZM002P02T2L

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

RZM002P02T2L Descrizione generale

Experience the future of mobile equipment technology with the advanced MOSFETs featured in product RZM002P02T2L. These state-of-the-art transistors boast ultra-low ON-resistance, thanks to innovative micro-processing techniques. Whether you require a compact design for portable devices or a high-power solution for industrial applications, this diverse product lineup has something for everyone. Stay ahead of the competition and meet market demands with the unparalleled performance and efficiency of these cutting-edge MOSFETs

Applicazione

SWITCHING

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	53 Weeks, 1 Day
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	20 V
Drain Current-Max (ID)	0.2 A	Drain-source On Resistance-Max	1.2 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-F3
JESD-609 Code	e2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	0.15 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Tin/Copper (Sn/Cu)
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	P-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	20 V	Id - Continuous Drain Current	200 mA
Rds On - Drain-Source Resistance	1.2 Ohms	Vgs - Gate-Source Voltage	- 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage	300 mV	Qg - Gate Charge	1.4 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	150 mW	Channel Mode	Enhancement
Series	RZM002P02	Fall Time	17 ns
Product Type	MOSFET	Rise Time	4 ns
Factory Pack Quantity	8000	Subcategory	MOSFETs
Transistor Type	1 P-Channel MOSFET	Typical Turn-Off Delay Time	17 ns
Typical Turn-On Delay Time	6 ns	Part # Aliases	RZM002P02
Unit Weight	0.000053 oz

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