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NDT456P +BOM

P-Channel Enhancement Mode Field Effect Transistor

Produttore:

onsemi
ProduttorePart #:

NDT456P
Scheda dati:

NDT456P Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NDT456P

NDT456P Descrizione generale

Specifically tailored for low voltage scenarios, the NDT456P Power SOT transistor is a valuable component for designers seeking to maximize energy efficiency. By minimizing on-state resistance and enhancing switching performance, ON Semiconductor has created a product that meets the demands of today's power-sensitive applications. From extending battery life in consumer electronics to controlling motors in automotive systems, the NDT456P offers a reliable solution for a wide range of power management needs

Caratteristiche principali

+36V, 2A
R_DSON = 0.040 Ω @ V_GS = +18 V
Low ripple current and noise performance
Compact and reliable design for industrial applications
High temperature operation capability

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Specifiche

Source Content uid	NDT456P	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	63 Weeks
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	7.5 A
Drain-source On Resistance-Max	0.03 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G4	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	4	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	3 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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