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Vedi Specifiche Tecniche

K9LBG08U0D +BOM

Produttore:

SAMSUNG
ProduttorePart #:

K9LBG08U0D
Scheda dati:

K9LBG08U0D Scheda dati (PDF)
Pacchetto/custodia:

TSOP48
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K9LBG08U0D

K9LBG08U0D Descrizione generale

GENERAL DESCRIPTION Offered in 4Gx8bit, the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1,744M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 800µs on the 4,314-byte page and an erase operation can be performed in typical 1.5ms on a (512K+27.25K)byte block. Data in the data register can be read out at 30ns(K9XDG08U5D: 50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9LBG08U0D′s extended reliability of TBD cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9LBG08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.

Caratteristiche principali

1. It is a 2Gbit (256MB) memory chip.
2. The interface is NAND Flash (5V).
3. It operates on a single 2.7V to 3.6V supply voltage.
4. Its package is a 48-ball VFBGA.

Applicazione

1. It is commonly used in consumer electronic devices such as smartphones, tablets, cameras, and portable media players.
2. It is also utilized in automotive electronics, industrial equipment, network devices, and solid-state drives (SSDs).

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