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Vedi Specifiche Tecniche

K9F1G08UOC +BOM

Produttore:

SAMSUNG
ProduttorePart #:

K9F1G08UOC
Scheda dati:

K9F1G08UOC Scheda dati (PDF)
Pacchetto/custodia:

TSSOP
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K9F1G08UOC

E-mail: [email protected]

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tel: +852 95804164

K9F1G08UOC Descrizione generale

GENERAL DESCRIPTIONOffered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1G08U0B′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1G08U0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.FEATURES• Voltage Supply - 3.3V Device(K9F1G08U0B) : 2.70V ~ 3.60V• Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit• Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte• Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.)• Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.)• Command/Address/Data Multiplexed I/O Port• Hardware Data Protection - Program/Erase Lockout During Power Transitions• Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years• Command Driven Operation• Intelligent Copy-Back with internal 1bit/528Byte EDC• Unique ID for Copyright Protection• Package : - K9F1G08U0B-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

Caratteristiche principali

1. It has a storage capacity of 1 Gbit.
2. The device operates on a 3.3V power supply.
3. It utilizes a NAND interface for data transfer.
4. The K9F1G08U0C supports simultaneous program and erase operations.
5. It offers fast read and write speeds, suitable for various applications.
6. The device includes a built-in bad block management system and error-checking functionality.

Applicazione

1. The K9F1G08U0C NAND flash memory is commonly used in consumer electronics like smartphones, tablets, and digital cameras for data storage.
2. It is also utilized in automotive applications for storing infotainment systems, navigation data, and firmware updates.
3. Industrial automation systems often use this component for data logging and firmware storage purposes.
4. The K9F1G08U0C can be found in networking devices such as routers and switches for storing system software and configurations.

Specifiche

Product Category

IC Chips

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