Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

K9F2G08UOC +BOM

Produttore:

SAMSUNG
ProduttorePart #:

K9F2G08UOC
Scheda dati:

K9F2G08UOC Scheda dati (PDF)
Pacchetto/custodia:

TSOP48
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K9F2G08UOC

K9F2G08UOC Descrizione generale

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.FEATURES • Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V • Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.) (*K9F2G08R0A: tRC = 42ns(Min)) • Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years • Command Driven Operation • Intelligent Copy-Back with internal 1bit/528Byte EDC • Unique ID for Copyright Protection • Package : - K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch) - K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F2G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Caratteristiche principali

1. It has a storage capacity of 2 gigabits or 256 megabytes.
2. The chip operates on a supply voltage ranging from 2.7 to 3.6 volts.
3. It uses a NAND interface, which enables easy data read and write operations.

Applicazione

1. K9F2G08UOC chips are commonly used in various electronic devices such as smartphones, tablets, digital cameras, and USB flash drives.
2. They are used for data storage purposes, functioning as non-volatile memory to retain information even when power is turned off.
3. These chips also find applications in embedded systems, industrial control systems, and automotive electronics.

Specifiche

Product Category

IC Chips

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..