Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

K9F2G08UOM +BOM

Produttore:

SAMSUNG
ProduttorePart #:

K9F2G08UOM
Scheda dati:

K9F2G08UOM Scheda dati (PDF)
Pacchetto/custodia:

TSSOP
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K9F2G08UOM

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

K9F2G08UOM Descrizione generale

GENERAL DESCRIPTION Offered in 256Mx8bit, the K9F2G08X0A is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns(42ns with 1.8V device) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F2G08X0A′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.FEATURES • Voltage Supply - 1.65V ~ 1.95V - 2.70V ~ 3.60V • Organization - Memory Cell Array : (256M + 8M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min.) (*K9F2G08R0A: tRC = 42ns(Min)) • Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology -Endurance : 100K Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : 10 Years • Command Driven Operation • Intelligent Copy-Back with internal 1bit/528Byte EDC • Unique ID for Copyright Protection • Package : - K9F2G08R0A-JCB0/JIB0 : Pb-FREE PACKAGE 63 - Ball FBGA I (10 x 13 / 0.8 mm pitch) - K9F2G08U0A-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9F2G08U0A-ICB0/IIB0 52 - Pin ULGA (12 x 17 / 1.00 mm pitch)

Caratteristiche principali

- It has a capacity of 2 gigabits (256 megabytes).
- It utilizes the NAND flash technology, which provides non-volatile storage.
- The chip operates on a single power supply voltage of 2.7V to 3.6V.
- It supports various memory organization options, such as x8 and x16.
- It offers a high-speed data transfer rate and high reliability.

Applicazione

- Due to its non-volatile nature and large storage capacity, it is commonly used in various electronic devices that require data storage and retrieval.
- It can be found in consumer electronics like smartphones, tablets, digital cameras, music players, and USB flash drives.
- It is also used in embedded systems, industrial applications, and automotive electronics for storing firmware, boot codes, and data logging.

Specifiche

Product Category

Memory ICs

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..