Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

K4T1G164QE-HCE6 +BOM

High-speed memory chip with 64MX16 capacity

Produttore:

SAMSUNG SEMICONDUCTOR INC
ProduttorePart #:

K4T1G164QE-HCE6
Scheda dati:

K4T1G164QE-HCE6 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.32
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K4T1G164QE-HCE6

Caratteristiche principali

JEDEC standard VDD= 1.8V ± 0.1V Power Supply
VDDQ= 1.8V ± 0.1V
333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin
8 Banks
Posted CAS
Programmable CASLatency: 3, 4, 5, 6
Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
- 50ohm ODT
- High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C
All of products are Lead-Free, Halogen-Free, and RoHS compliant

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.32	Access Mode	MULTI BANK PAGE BURST
Access Time-Max	0.45 ns	Additional Feature	AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)	333 MHz	I/O Type	COMMON
Interleaved Burst Length	4,8	JESD-30 Code	R-PBGA-B84
JESD-609 Code	e1	Length	12.5 mm
Memory Density	1073741824 bit	Memory IC Type	DDR2 DRAM
Memory Width	16	Moisture Sensitivity Level	3
Number of Functions	1	Number of Ports	1
Number of Terminals	84	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode	SYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min
Organization	64MX16	Output Characteristics	3-STATE
Peak Reflow Temperature (Cel)	260	Qualification Status	Not Qualified
Refresh Cycles	8192	Seated Height-Max	1.2 mm
Self Refresh	YES	Sequential Burst Length	4,8
Standby Current-Max	0.01 A	Supply Current-Max	0.185 mA
Supply Voltage-Max (Vsup)	1.9 V	Supply Voltage-Min (Vsup)	1.7 V
Supply Voltage-Nom (Vsup)	1.8 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	OTHER
Terminal Finish	TIN SILVER COPPER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Width	7.5 mm

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..