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K4S641632K +BOM

French Electronic Distributor since 1988

Produttore:

SANYO
ProduttorePart #:

K4S641632K
Scheda dati:

K4S641632K Scheda dati (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
DRAM Type:

SDRAM
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K4S641632K

K4S641632K Descrizione generale

GENERAL DESCRIPTIONThe K4S640832K / K4S641632K is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, / 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.FEATURES• JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed address• Four banks operation• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)• All inputs are sampled at the positive going edge of the system clock• Burst read single-bit write operation• DQM (x8) & L(U)DQM (x16) for masking• Auto & self refresh• 64ms refresh period (4K cycle)• Pb/Pb-free Package• RoHS compliant for Pb-free Package

Specifiche

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
DRAM Type	SDRAM	Chip Density (bit)	64M
Organization	4Mx16	Number of Internal Banks	4
Number of Words per Bank	1M	Number of Bits/Word (bit)	16
Data Bus Width (bit)	16	Maximum Clock Rate (MHz)	133
Maximum Access Time (ns)	5.4\|6	Address Bus Width (bit)	14
Interface Type	LVTTL	Minimum Operating Supply Voltage (V)	3
Maximum Operating Supply Voltage (V)	3.6	Operating Current (mA)	85
Minimum Operating Temperature (°C)	0	Maximum Operating Temperature (°C)	70
Number of I/O Lines (bit)	16	Packaging	Tape and Reel
Mounting	Surface Mount	PCB changed	54
Pin Count	54	Lead Shape	Gull-wing

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