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K4B4G0846D-BYK0 +BOM

High-performance memory solution for demanding computing applications

Produttore:

Samsung Electronics
ProduttorePart #:

K4B4G0846D-BYK0
Scheda dati:

K4B4G0846D-BYK0 Scheda dati (PDF)
ECCN (US):

EAR99
Automotive:

No
PPAP:

No
DRAM Type:

DDR3L SDRAM
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per K4B4G0846D-BYK0

K4B4G0846D-BYK0 Descrizione generale

K4B4G0846D-BYK0 is a specific type of electronic component used in the manufacturing of computer systems and other electronic devices. It is a DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) chip.

Caratteristiche principali

DDR4 technology: It offers higher data transfer rates, improved reliability, and lower power consumption compared to previous generations.
Capacity: The "4G" in the part number indicates a capacity of 4 gigabits or 512 megabytes.
Organization: It is organized as 8 banks of 16M x 8 bits, providing a total of 4 gigabits.
Clock Speed: The specific clock speed or operating frequency may vary based on the specific module configuration.

Applicazione

K4B4G0846D-BYK0 DDR4 SDRAM chips are commonly used in various electronic devices, including but not limited to:
Desktop computers
Laptops and ultrabooks
Servers and data centers
Gaming consoles
Mobile devices such as smartphones and tablets

Specifiche

ECCN (US)	EAR99	Part Status	Obsolete
Automotive	No	PPAP	No
DRAM Type	DDR3L SDRAM	Chip Density (bit)	4G
Organization	512Mx8	Number of Internal Banks	8
Number of Words per Bank	64M	Number of Bits/Word (bit)	8
Data Bus Width (bit)	8	Maximum Clock Rate (MHz)	1600
Maximum Access Time (ns)	0.225	Address Bus Width (bit)	19
Minimum Operating Supply Voltage (V)	1.283	Typical Operating Supply Voltage (V)	1.35
Maximum Operating Supply Voltage (V)	1.45	Operating Current (mA)	68
Minimum Operating Temperature (°C)	0	Maximum Operating Temperature (°C)	95
Supplier Temperature Grade	Commercial	Number of I/O Lines (bit)	8
Mounting	Surface Mount	PCB changed	78
Pin Count	78

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Imballaggio

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