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IHW30N160R2FKSA1 +BOM

IGBT transistors with monolithic diode

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IHW30N160R2FKSA1
Scheda dati:

IHW30N160R2FKSA1 Scheda dati (PDF)
Series:

TrenchStop®
IGBT Type:

NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

1600 V
Current - Collector (Ic) (Max):

60 A
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IHW30N160R2FKSA1

IHW30N160R2FKSA1 Descrizione generale

Elevate your industrial operations with the unparalleled performance of the IHW30N160R2FKSA1 from Infineon Technologies. This high-power IGBT module is tailor-made for demanding applications, featuring a 30-amp current rating and a 1600-volt voltage rating for top-notch reliability and efficiency. Its state-of-the-art IGBT technology delivers lightning-fast switching speeds and minimal losses, setting new standards for performance in the industry. Compact yet robust, this module is designed for easy installation and effective thermal management, making it the go-to choice for demanding industrial environments

Infineon Technologies Corporation inventario

Caratteristiche principali

Very low forward voltage
Low EMI
Tighten parameter distribution
High ruggedness, temperature stable behaviour
Better thermal management

Infineon Technologies Corporation Stock originale

Applicazione

Power Management

Specifiche

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	TrenchStop®
IGBT Type	NPT, Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	1600 V
Current - Collector (Ic) (Max)	60 A	Current - Collector Pulsed (Icm)	90 A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 30A	Power - Max	312 W
Switching Energy	4.37mJ	Input Type	Standard
Gate Charge	94 nC	Td (on/off) @ 25°C	-/525ns
Test Condition	600V, 30A, 10Ohm, 15V	Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole	Base Product Number	IHW30
Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.6 kV	Collector-Emitter Saturation Voltage	1.8 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	60 A
Pd - Power Dissipation	312 W	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Gate-Emitter Leakage Current	100 nA
Product Type	IGBT Transistors	Factory Pack Quantity	240
Subcategory	IGBTs	Tradename	TRENCHSTOP
Part # Aliases	IHW30N160R2 SP000273701 IHW3N16R2XK	Unit Weight	0.191185 oz

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