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N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ
8-SOICProduttore:
Fairchild Semiconductor
ProduttorePart #:
FDS6680AS
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
End Of Life
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
One of the unique aspects of the FDS6680AS is its integrated Schottky diode, which is made possible through ON Semiconductor's innovative SyncFET technology. This integrated diode helps to simplify the design of synchronous rectifiers, making it easier to achieve high levels of efficiency. In fact, the performance of the FDS6680AS as a low-side switch is comparable to using the FDS6680 in parallel with a separate Schottky diode
Source Content uid | FDS6680AS | Pbfree Code | Yes |
Part Life Cycle Code | End Of Life | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 11.5 A |
Drain-source On Resistance-Max | 0.01 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G8 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 8 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 2.5 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Prodotto 365 giorni
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