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FDPF5N50UT +BOM
MOSFET 500V: Introducing FDPF5N50UT, a state-of-the-art FRFET MOSFET tailored for high-power electronic systems
TO-220-3-
Produttore:
Onsemi
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ProduttorePart #:
FDPF5N50UT
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Scheda dati:
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REACH:
Details
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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EDA/CAD Modelli:
Disponibilità: 7072 PZ
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FDPF5N50UT Descrizione generale
The FDPF5N50UT is a member of the UniFET MOSFET family, known for its high voltage capabilities and advanced technology. This MOSFET is specifically designed to minimize on-state resistance while enhancing switching performance and increasing avalanche energy strength. With the UniFET Ultra FRFET technology, this MOSFET boasts a significantly improved body diode reverse recovery performance, with a trr of less than 50nsec and a reverse dv/dt immunity of 20V/nsec, far surpassing traditional planar MOSFETs on the market. By utilizing this innovative technology, the UniFET Ultra FRFET MOSFET eliminates the need for additional components, thereby enhancing system reliability in applications that demand superior MOSFET body diode performance
Caratteristiche principali
- Safe operating area exceeding 400V
- Rise time less than 50ns
- Low ESR and high current rating
- Excellent radiation resistance
- Avalanche tested for reliability
- Fast fall time ensuring safe switching
Applicazione
- Cost-effective solution
- Suitable for commercial use
- Stable power output
Specifiche
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 500 V | Id - Continuous Drain Current | 4 A |
Rds On - Drain-Source Resistance | 1.65 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 5 V | Qg - Gate Charge | 11 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 28 W | Channel Mode | Enhancement |
Tradename | UniFET FRFET | Series | FDPF5N50UT |
Configuration | Single | Fall Time | 20 ns |
Forward Transconductance - Min | 4.8 S | Height | 16.07 mm |
Length | 10.36 mm | Product Type | MOSFET |
Rise Time | 21 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 27 ns | Typical Turn-On Delay Time | 14 ns |
Width | 4.9 mm | Unit Weight | 0.068784 oz |
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In Stock: 7.072
Minimum Order: 1
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