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CGHV14800F +BOM
Advanced MOSFET technology for high-frequency, high-amperage performance
SMD-
Produttore:
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ProduttorePart #:
CGHV14800F
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Scheda dati:
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Series:
GaN
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Technology:
HEMT
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Frequency:
1.4GHz
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Gain:
14.5dB
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EDA/CAD Modelli:
Disponibilità: 5578 PZ
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CGHV14800F Descrizione generale
The CGHV14800F is a gallium nitride (GaN) high-electron-mobility transistor (HEMT) designed for high-frequency and high-power RF applications. It offers high efficiency, high power density, and excellent reliability, making it suitable for demanding RF power amplifier applications.
Caratteristiche principali
- Frequency Range: It operates in the frequency range of 1.2 GHz to 1.4 GHz, making it suitable for various RF power amplifier applications in this frequency range.
- High Power Output: It is capable of delivering high output power, typically in the range of 800-900 Watts.
- High Efficiency: The GaN HEMT technology used in the CGHV14800F offers high efficiency, enabling power amplifiers to achieve high power output with minimal power dissipation.
- High Gain: The transistor provides high gain, allowing for efficient amplification of RF signals.
- Wide Bandwidth: It has a wide bandwidth, enabling it to handle a broad range of RF frequencies.
- Robust and Reliable: It is designed to operate reliably under high-power and high-temperature conditions, ensuring long-term performance and durability.
Applicazione
The CGHV14800F is commonly used in various RF power amplifier applications, including wireless communication systems, radar systems, satellite communications, industrial heating applications, and other high-power RF applications. It is particularly suitable for applications that require high power, high efficiency, and wide bandwidth.
Specifiche
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Series | GaN |
Technology | HEMT | Frequency | 1.4GHz |
Gain | 14.5dB | Voltage - Test | 50 V |
Current Rating (Amps) | 24A | Noise Figure | - |
Current - Test | 800 mA | Power - Output | 900W |
Voltage - Rated | 125 V | Base Product Number | CGHV14800 |
Product Category | RF JFET Transistors | Transistor Type | HEMT |
Operating Frequency | 1.2 GHz to 1.4 GHz | Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 150 V | Vgs - Gate-Source Breakdown Voltage | - 10 V to 2 V |
Id - Continuous Drain Current | 24 A | Output Power | 800 W |
Maximum Drain Gate Voltage | - | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 100 C | Pd - Power Dissipation | - |
Mounting Style | Screw Mount | Development Kit | CGHV14800F-TB |
Forward Transconductance - Min | - | Operating Temperature Range | - 40 C to + 100 C |
Product Type | RF JFET Transistors | Factory Pack Quantity | 1 |
Subcategory | Transistors | Vgs th - Gate-Source Threshold Voltage | - 3.8 V |
Unit Weight | 2.504187 oz |
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In Stock: 5.578
Minimum Order: 1
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